PART |
Description |
Maker |
Q67006-A9195-A901 Q67000-A9210-A901 Q67000-A9210-C |
CAP CER DISC 1800PF 2KV 10% RAD CAP CER DISC 220PF 2KV 10% RAD 5-V Low-Drop Fixed Voltage Regulator 5 - V低拖放固定稳压器
|
SIEMENS AG
|
FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五(DRM)的|00VAR75 THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五(DRM)的|00AE
|
Dynex Semiconductor, Ltd. Fairchild Semiconductor, Corp.
|
301UA200 |
Diode Switching 2KV 330A 2-Pin DO-9
|
New Jersey Semiconductor
|
DF100R12KF-A FD150R12KF-K |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 100A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 100A一(c)|米:HL093HW048 TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 150A一(c)|米:HL093HW048
|
Atmel, Corp. Air Cost Control
|
2T2KF |
2KV Diode, Axial Leaded Fast Recovery Rectifier Diodes
|
Semtech Corporation
|
7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C) From old datasheet system
|
Fuji Semiconductors, Inc.
|
HGT1S1N120CNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 6.2AI(丙)|63AB
|
Intersil, Corp.
|
FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五(巴西)国际消费电子展| 8A条一(c
|
ECM Electronics, Ltd.
|